Table 1 The effective mass parameters used in the calculations[42]
From: Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
a | C 11 | C 12 | a v | a c | b | E g | m e | m h | ε | |
---|---|---|---|---|---|---|---|---|---|---|
InN | 4.98 | 187 | 125 | -0.7 | -2.65 | -1.2 | 0.7 | 0.1 | 0.835 | 9.7 |
GaN | 4.50 | 293 | 159 | -0.69 | -6.71 | -2.0 | 3.22 | 0.19 | 0.81 |