Figure 7From: Photovoltaic Ge/Si quantum dot detectors operating in the mid-wave atmospheric window (3 to 5 μ m)Measured responsivity and detectivity. As a function of applied bias for Ge/Si QDIPs in which the sheet boron density in the δ-doping layers was varied from 4 × 1011 to 12 × 1011cm−2. All devices have a top doping configuration with d = 5 nm.Back to article page