Account

Table 1 Values of relevant parameters for three TiSi NW samples

From: Metallic conduction and large electron-phonon-impurity interference effect in single TiSi nanowires

Sample	Diameter	ρ(300 K)	_{ρ 0}	ρ(300 K)/_{ρ 0}	_{β BG}	_{θ D}	_{β int}
	(nm)	(μΩ cm)	(μΩ cm)		(μΩ cm K^-1)	(K)	(K^-2)
A	190	310	180	1.72	0.87	520	1.7 ×1⁰⁻⁵
B	150	350	290	1.21	0.13	650	5.5 ×1⁰⁻⁶
C	100	350	330	1.06	0.10	680	1.8 ×1⁰⁻⁶

Note that the thickness of the oxide layer (approximately 10 nm) is subtracted in the estimated NW diameters.

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