Figure 2From: Structural variations of Si1−xC x and their light absorption controllabilityTEM and TED images. (a) TEM image of the as-deposited SSC/SRSC superlattice. HRTEM and TED images of SL: (b) as-deposited and annealed at (c) 800°C, (d) 900°C, and (e) 1,000°C. Dashed lines indicate the surface of substrate Si wafer, and dashed circles indicate the boundaries of nanocrystalline Si.Back to article page