Figure 1From: Spin accumulation assisted by the Aharonov-Bohm-Fano effect of quantum dot structuresThe AB interferometer of one QD. (a) Schematic of an AB interferometer with an embedded QD. (b, c, d) The average electron occupation number and spin accumulation in QD affected by the structure parameters. The relevant parameters are taken to be ρ = 1, |V α |= 0.1, and e V s = 1.0.Back to article page