Figure 6From: RF performances of inductors integrated on localized p+-type porous silicon regionsQ factor of an inductor integrated on common and PS substrates. Frequency variation of the Q factor of a W50N15R78 inductor integrated on 3-kΩ cm and 20-mΩ cm Si, glass, 100- and 200-μm localized PS substrates. Better Qmax were obtained with 200- and 100-μm localized PS than with high-resistivity and highly doped silicon substrates.Back to article page