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Table 1 Q max ( f Qmax ) of inductors integrated on localized PS and full PS sheet

From: RF performances of inductors integrated on localized p+-type porous silicon regions

Inductor design

100-μm PS

200-μm PS

Surface ratios

Localized PS

Full PS sheet

Surface ratios

Localized PS

Full PS sheet

Qmax (fQmax GHz)

Qmax (fQmax GHz)

Qmax (fQmax GHz)

Qmax (fQmax GHz)

W10N55R30

0.12

4.7 (2.6)

7.2 (4.7)

0.07

6.9 (3.4)

8.7 (5.4)

W10N55R80

0.13

5.3 (2.3)

6.3 (3)

0.08

-

7.8 (3.2)

W30N15R80

0.12

9.1 (4.2)

12.1 (8.4)

0.07

12.4 (5.3)

22 (12)

W30N35R130

0.22

4.1 (2.2)

6.3 (3.7)

0.15

4.1 (1.9)

7.7 (4)

W50N15R78

0.18

9.4 (3.8)

10.6 (6.6)

0.11

11 (4.6)

17.5 (8)

W50N35R30

0.3

-

6 (2.3)

0.21

4 (1.2)

7.5 (3)

W50N55R175

0.38

3.11 (0.4)

3.8 (0.6)

0.3

-

-

  1. Comparison of the Qmax obtained with several inductors integrated on localized and full PS sheet substrates. PS layers, 100- and 200-μm thick, are studied. In each case, Qmax and fQmax are decreased with the PS localization. The surface ratios are the calculated ratios between the surface of the inductor metal coil and the surface of the PS region (the under-mask etching is included in the PS surface). Qmax, maximum Q factors; fQmax, frequency for the one Qmax.

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