Table 2 Q max ( f Qmax ) of inductors integrated on localized PS and other usual substrates
From: RF performances of inductors integrated on localized p+-type porous silicon regions
Inductor design | Qmax (fQmax) (GHz) | ||||||
---|---|---|---|---|---|---|---|
3-kΩ cm Si | 20-mΩ cm Si | 100-μm PS | 200-μm PS | 100-μm localized PS | 200-μm localized PS | Glass | |
W10N55R30 | 3.8 (2.6) | 1.8 (1) | 7.2 (4.7) | 8.7 (5.4) | 4.7( 2.6) | 6.9 (3.4) | 8.3 (5.5) |
W10N55R80 | 3.1 (1.6) | 1.5 (0.6) | 6.3 (3) | 7.8 (3.2) | 5.3 (2.3) | - | 7.8 (3.76) |
W30N15R80 | 9.9 (5.6) | 3.6 (1.5) | 12.1(8.4) | 22 (12) | 9.1 (4.2) | 12.4 (5.3) | 23 (13) |
W30N35R130 | 2.7 (1.7) | 1.6 (7.6) | 6.3(3.7) | 7.7 (4) | 4.1 (2.2) | 4.1 (1.9) | 8.7 (4.5) |
W30N55R30 | 3.5 (9.6) | 1.7 (0.3) | 5.5 (1.7) | 6.6 (2) | 4.3 (1.2) | 4.5 (1.3) | 6.9 (2.15) |
W50N15R78 | 8.8 (4.3) | 3.41 (1) | 10.6 (6.6) | 17.5 (8) | 9.4 (3.8) | 11 (4.6) | 18.7 (7.8) |
W50N55R175 | 2.4 (0.3) | 1.2 (0.1) | 3.8 (0.6) | - | 3.11 (7.1) | - | 5.7 (0.9) |