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Table 2 Q max ( f Qmax ) of inductors integrated on localized PS and other usual substrates

From: RF performances of inductors integrated on localized p+-type porous silicon regions

Inductor design

Qmax (fQmax) (GHz)

3-kΩ cm Si

20-mΩ cm Si

100-μm PS

200-μm PS

100-μm localized PS

200-μm localized PS

Glass

W10N55R30

3.8 (2.6)

1.8 (1)

7.2 (4.7)

8.7 (5.4)

4.7( 2.6)

6.9 (3.4)

8.3 (5.5)

W10N55R80

3.1 (1.6)

1.5 (0.6)

6.3 (3)

7.8 (3.2)

5.3 (2.3)

-

7.8 (3.76)

W30N15R80

9.9 (5.6)

3.6 (1.5)

12.1(8.4)

22 (12)

9.1 (4.2)

12.4 (5.3)

23 (13)

W30N35R130

2.7 (1.7)

1.6 (7.6)

6.3(3.7)

7.7 (4)

4.1 (2.2)

4.1 (1.9)

8.7 (4.5)

W30N55R30

3.5 (9.6)

1.7 (0.3)

5.5 (1.7)

6.6 (2)

4.3 (1.2)

4.5 (1.3)

6.9 (2.15)

W50N15R78

8.8 (4.3)

3.41 (1)

10.6 (6.6)

17.5 (8)

9.4 (3.8)

11 (4.6)

18.7 (7.8)

W50N55R175

2.4 (0.3)

1.2 (0.1)

3.8 (0.6)

-

3.11 (7.1)

-

5.7 (0.9)

  1. Comparison of Qmax obtained with several inductors integrated on localized PS, full PS sheet and common substrates used for radiofrequency applications. Better Qmax were obtained with 200-μm localized PS than with highly doped and high-resistivity silicon bulk. PS, porous silicon; Qmax, maximum Q factors; fQmax, frequency for the one Qmax.

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