Table 3 Resonant frequencies of inductors integrated on PS and other substrates
From: RF performances of inductors integrated on localized p+-type porous silicon regions
Inductor characteristics | fr(GHz) | |||||
|---|---|---|---|---|---|---|
Inductor design | L (nH) | Glass | 3-kΩ cm Si | 20-mΩ cm Si | 200-μm full PS sheet | 100-μm full PS sheet |
W10N55R30 | 5.3 | 15.8 | 15.3 | 15.6 | 15.3 | - |
W50N15R78 | 1.2 | 16.7 | 17 | 8.3 | 17 | 18.2 |
W50N35R30 | 3.5 | 6.5 | 6.4 | 4 | 6.5 | 7 |
W50N55R175 | 21 | 1.75 | 1.7 | 0.7 | - | 2.1 |
W10N55R80 | 10.2 | 10 | 9 | 2 | 10.5 | - |
W30N35R130 | 7 | 14.5 | 14 | 5.11 | 14.5 | - |