Table 1 Epitaxial structure of the THH-VCSOA
Repetition | Material | Layer thickness (Å) | Dopants | Concentration/cm3 |
|---|---|---|---|---|
6 | GaAs | 956 | Undoped | - |
AlAs | 1,113 | |||
1 | GaAs | 1,500 | C | 1 × 1017 |
11 | GaAs | 100 | Undoped | - |
GaInNAs | 60 | |||
GaAs | 100 | |||
1 | GaAs | 1,500 | Si | 1 × 1017 |
1 | AlAs | 1,113 | n-doped | 1 × 1017 |
GaAs | 956 | |||
19 | AlAs | 1,113 | Undoped | - |
GaAs | 956 | |||
1 | AlAs | 1,113 | ||
Semi-insulating GaAs substrate | ||||