Figure 1From: Formation of Ga droplets on patterned GaAs (100) by molecular beam epitaxySEM images of interface between trench ( patterned ) and strip top ( un-patterned ) areas of GaAs ( 100 ). Strip patterns were etched along [01–1] (a). The height of strip is approximately 500 nm as clearly seen in the enlarged side-view SEM images in (b) and (c).Back to article page