Figure 2
From: Formation of Ga droplets on patterned GaAs (100) by molecular beam epitaxy
SEM images of the interface between trench ( patterned ) and strip top ( un-patterned ) areas of GaAs ( 100 ). SEM images of the interface between the trench (patterned) and strip top (un-patterned) areas of GaAs (100) showing the sharp contrast of size and density of Ga metal droplets. Ga droplets were fabricated with the deposition of 20 ML at the Tsub of 400°C.