Figure 7From: Formation of Ga droplets on patterned GaAs (100) by molecular beam epitaxyAFM images of GaAs (100) on strip top and trench area before fabrication of Ga MDs . AFM images of GaAs (100) on (a) strip top area and (b) trench area before the fabrication of Ga MDs. (c) and (d) show the cross-sectional line profiles (CLPs) of two areas. White lines in (a) and (b) are the corresponding locations of CLPs shown in (c) and (d).Back to article page