Figure 2From: Role of surface composition in morphological evolution of GaAs nano-dots with low-energy ion irradiationCore-level XPS spectra of Ga and As elements. Pristine samples (a, e) and samples irradiated at the fluences of 1 × 1017 (b, f), 3 × 1017 (c, g), and 7 × 1017 ions/cm2 (d, h) (a, b, c, and d correspond to Ga, whereas e, f, g, and h correspond to As).Back to article page