Figure 3

X-ray nanospot simulation of a scan over a SiGe island. (a) shows the spot position images, represented by the weighting values w _n , whereas in (b), the product of w _n with the y-component of the internal displacement field is depicted (see text for explanation). (c) shows the corresponding RSM simulations near SiGe(004) and the comparison with experimental results (d). The Si substrate reflection has been blocked by a beam stop. Individually excited crystal truncation rods of SiGe(111) side facets can be seen in simulation (c) and measurement (d).