Figure 2From: Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formationTEM images of the Au/ZnO/Au device with a nanogap of 190 nm.(a) Before and (b) after forming in a vacuum of <10−9 Torr. (c)The corresponding I-V behavior where the broken behavior could be seen.Back to article page