Figure 3From: Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formationSEM images of the An/ZnO/Au (a) before and (b) after forming in air. (c) The corresponding I-V behavior shows the bipolar switching characteristic with forming, set, and reset voltages of approximately 8.5, 4.6, and 4.8 V, respectively.Back to article page