The intensive terahertz electroluminescence induced by Bloch oscillations in SiC natural superlattices

Table 1 Parameters of minizone transport in silicon carbide polytypes

SiC poly-type	F_t for the Bloch oscillation of electrons, (10⁵V/cm)	F_t for the Stark-phonon resonance, (10⁶V/cm)	F_t for complete localization of the first electron miniband, (10⁶V/cm)	F_t for resonance tunneling of electrons between the first and second (10⁶V/cm)	The width of the first electron miniband E₁ (meV)	The gap between the first and second minibands E_1,2(meV)	Saturated velocity V_s of electrons in the first miniband F∥C,(cm/s)
4H	2.9[18]	1.6,
		2.0[22]			≈ 500		3.3 × 10⁶[24]
6H	1.5[18]	0.6, 1.1,
		1.37[22]	1.8[22]	1.9[22]	260[22]	176[22]	2.0 × 10⁶[24]
8H	1.1[18]				≈ 140		1.0 × 10⁶[24]
15R							1.2 × 10⁶[24]
21R							4.4 × 10³[23]

Parameters of minizone transport in silicon carbide polytypes. Here, F_t is the threshold field, and (Est.) means an approximate estimation made on the basis of the experimental value of E₁ for the 6H-SiC polytype and taking into account the fact that $E_{1} \propto k_{d}^{2}$ , where k_d= ħ/d and d is the NSL period. F, electric field. F_t, threshold electric field.