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The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1−xIn x N y As1−y/GaAs quantum well
© Yesilgul et al.; licensee Springer. 2012
Received: 16 July 2012
Accepted: 28 September 2012
Published: 24 October 2012
Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1−xIn x N y As1−y/GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.
Over the past decade, the GaInNAs-based quantum-well structures have emerged as a subject of considerable theoretical and experimental research interest due to their very unique physical properties and due to a wide range of possible device applications. GaInNAs exhibits interesting new properties and differs considerably from the conventional III to V alloys. Significant changes occur in the electronic band structure compare with GaInAs with incorporation of small amounts of nitrogen into GaInAs. These include a large redshift of the bandgap, a highly nonlinear pressure dependence of the bandgap, an increase in the electron effective mass, and the N-induced formation of new bands [1–10]. This new material has received considerable attention due to the growing interest in its basic physical properties. Shan et al. showed that interaction between the conduction band and narrow resonant band formed by nitrogen states in GaInNAs alloys leads to a splitting of conduction band into sub-bands and a reduction of the fundamental bandgap . Fan et al. have investigated the electronic structures of strained Ga1−xIn x N y As1−y/GaAs quantum wells . Hetterrich et al. investigated the electronic states in strained Ga0.62In0.38N0.015As0.985/GaAs multiple quantum-well structures . Pan et al. have investigated the optical transitions in Ga1−xIn x N y As1−y/GaAs single and multiple quantum wells using photovoltaic measurements at room temperature . Several studies have been done on detailed optical characterization of Ga1−xIn x N y As1−y. These papers include the temperature dependence of photoluminescence, absorption spectrum, and low-temperature photoluminescence [15–19].
There are many studies associated with the hydrogenic binding of an electron to a donor impurity which is confined within low-dimensional heterostructures [20–25]. The understanding of the electronic and optical properties of impurities in such systems is important because the optical and transport properties of devices made from these materials are strongly affected by the presence of shallow impurities. Also, it is well known that a magnetic field considerably affects the optical and electronic properties of semiconductors. Thus, the effects of magnetic field on the impurity binding energy are a very important problem [26–28]. However, up to now, to the best of our knowledge, no theoretical studies have been focused on impurity binding energies in single GaInNAs/GaAs quantum well (QW) under the magnetic field.
In this paper, using a variational technique within the effective mass approximation, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen (N) and indium (In) concentrations on impurity binding energy in a Ga1 − xIn x N y As1 − y/GaAs QW.
with L as the well width, and V0 is the conduction band offset which is taken to be 80% of the total discontinuity between the bandgap of GaAs and Ga1 − xIn x N y As1 − y grown on GaAs .
Parameters of the binary compounds used for the calculation
Electron effective mass m*(m0)
Energy gap Eg (eV)
where E z is the confinement ground state energy of the electron.
Results and discussion
In this paper, we have theoretically investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1 − xIn x N y As1 − y/GaAs QW.
As a summary, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on the impurity binding energy in a Ga1−xIn x N y As1−y/GaAs quantum well in this study. The calculations were performed within the effective mass approximation. We have found the impurity binding energy on the magnetic field, the impurity position, and the nitrogen and indium concentrations. This case gives a new degree of freedom in device applications, such as near-infrared electro-absorption modulators and quantum well infrared detectors, and all optical switches. We hope that our results will stimulate further investigations of the related physics as well as device applications of group III nitrides.
This work supported by The Scientific and Technological Research Council of Turkey (TÜBİTAK) for a research grant COST 109T650 and was partially supported by the Scientific Research Project Fund of Cumhuriyet University under the project number F-360. MEMR acknowledges support from Mexican CONACYT through Research Grant CB-2008-101777 and 2011-2012 Sabbatical Grant No. 180636. He is also grateful to the Universidad de Antioquia for hospitality during his sabbatical stay. This research was partially supported by Colombian Agencies: CODI-Universidad de Antioquia (Estrategia de Sostenibilidad 2013-2014 de la Universidad de Antioquia) and Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (CAD-exclusive dedication project (2012-2013). The authors thank CONACYT (Mexico) and COLCIENCIAS (Colombia) for support under the 2012-2013 Bilateral Agreement "Estudio de propiedades opticas, electronicas y de transporte en sistemas de baja dimension basados en carbono y semiconductores III-V: efectos de campos externos,temperatura y presion hidrostatica". The work was developed with the help of CENAPAD-SP, Brazil.
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