Figure 1From: The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1−xIn x N y As1−y/GaAs quantum wellVariation of impurity binding energy as function of well width: magnetic-field values and nitrogen concentrations. This is for some values of the magnetic field (B = 0, 10, and 20 T) and nitrogen concentrations (y = 0, 0.005, and 0.01).Back to article page