Figure 2From: The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1−xIn x N y As1−y/GaAs quantum wellVariation of impurity binding energy as function of well width: magnetic-field values and indium concentrations. This is for different values of the magnetic field and for two different indium concentrations (x = 0.15 and x = 0.30).Back to article page