Figure 3From: Temperature-dependent Raman investigation of rolled up InGaAs/GaAs microtubesRaman mapping. The GaAs peak position around a defective microtube (cone) acquired with 514.5 nm laser line. (a) Optical micrograph surrounded by the dashed line where the Raman images (b) and (c) shown in the figure were taken. In (b), the Raman image shows the peak position of the GaAs LO phonon mode. (c) Raman image of the TO mode intensity of GaAs.Back to article page