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Figure 2 | Nanoscale Research Letters

Figure 2

From: Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots

Figure 2

Calculation results of WL growth dynamics for different InAs deposition rates at (a) 490°C and (b) 520°C. The horizontal and vertical dotted lines correspond to the critical thickness and t = 20 s, respectively. The insets of (a) and (b) zoom in the 3D growth stages. Here, we use b = 8.3 × 10−9, α = 0.85, β = 10, and E dif = 1.04 eV to solve the rate equations numerically.

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