Figure 1From: Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pitsWetting layer thickening around steep pits. (a) 3D AFM image of the pits after the growth of 3.8 ML of Ge and (b) a surface-sensitive AFM height image (scan size 3 × 3 μm2) of the Ge wetting layer growing on the pit-patterned field. Wetting layer thickening (bright color in (b)) can be observed in the <110> directions, i.e., where the pit has the steepest facets - {111}.Back to article page