Figure 3From: Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pitsBorder of the patterned field. AFM surface angle image, recorded on the border between patterned field and planar surrounding. No island formation is observed on the planar part of the sample. The deposited Ge volume (3.8 ML) is below the critical thickness for island nucleation on planar substrates (4.2 ML).Back to article page