Morphological, compositional, structural, and optical properties of Si-nc embedded in SiO x films

Table 4 Peak position obtained by deconvolution from PL spectra and defect types relationated with the peak position

Defect types	Peak positions (nm)					Reference
	1,400°C	1,300°C	1,150°C	1,050°C	900°C
NOV defects (O₃ ≡ Si-Si ≡ O₃)	428	483	458	467		[12]
Centers of defects E’δ				521	523	[12]
E’δ center or oxygen deficiency			553	559		[12, 32]
Defect vacancies of oxygen (O ≡ Si-Si ≡ O)		591	600	579	584	[30, 33]
Oxide relationated in the interface of Si/SiO_x	675	695				[31, 34]
Not identified	796	813