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Figure 1 | Nanoscale Research Letters

Figure 1

From: Effects of an intense, high-frequency laser field on bound states in Ga1 − xIn x N y As1 − y/GaAs double quantum well

Figure 1

The variation of the laser-dressed potential, bound states, and squared wave functions. Related to these bound states in Ga1 − xIn x N y As1 − y/GaAs DQW which has the width L w1 = L w2 = 100 Å, Lb = 50 Å as a function of the position. In and N concentrations are x = 0.15, y = 0.005, respectively. The results are as follows: (a) α0 = 0 Å, (b) α0 = 50 Å, and (c) α0 = 100 Å.

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