Figure 2From: Effects of an intense, high-frequency laser field on bound states in Ga1 − xIn x N y As1 − y/GaAs double quantum wellThe variation of energy levels. For bound states in Ga1 − xIn x N y As1 − y/GaAsDQW which has the width L w1 = L w2 = 100 Å, Lb = 50 Å as a function of the laser-dressing parameter. The results are as follows: (a) x = 0.15, y = 0.005; (b) x = 0.30, y = 0.005; and (c) x = 0.15, y = 0.01.Back to article page