Figure 11From: Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyteWeight loss of the Ge0.5Se0.5and Ge0.2Se0.8switching materials. The Ge0.5Se0.5 material shows lower loss below 100°C, indicating that a higher Ge content enhances thermal stability.Back to article page