Figure 8From: Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyteCuz+ ion migration and filament formation. (a) HRTEM image of an Al/Cu/Ge0.2Se0.8/W resistive memory device after 6 × 103 P/E cycles and the device kept in SET condition. (b) The diameter of the Cu filament is approximately 30 nm. (c) Amorphous Ge0.2Se0.8 film is observed at the without-filament region by FFT. (d) FFT in Cu electrode. (e) to (f) Crystalline Cu filament is observed. (g) EDX analysis at the points indicated in (b). The numbers (1), (2), and (3) indicated in (b) correspond to the EDX analysis positions.Back to article page