Figure 2From: InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriersAFM images (a, b, c, d) of samples A, B, C, and D (5 × 5 μm2). The root mean square roughness of samples B, C, and D are 1.937, 1.815, and 0.416 nm, respectively.Back to article page