Table 1 Growth parameters of samples B, C, and D
From: InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
| Sample | GaN barrier growth temperature (°C) | GaN barrier growth ambient |
|---|---|---|
| B | 650 | N2 |
| C | 650 | H2 |
| D | 760 | H2 |
From: InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
| Sample | GaN barrier growth temperature (°C) | GaN barrier growth ambient |
|---|---|---|
| B | 650 | N2 |
| C | 650 | H2 |
| D | 760 | H2 |