Table 1 TEM-EDX of crystalline nanostructures of Al and Si oxides for varying dwell times
Element | Dwell time | ||
---|---|---|---|
3 ms | 5 ms | 9 ms | |
Aluminum | 30.06 | 18.99 | 3.81 |
Silicon | 9.58 | 15.67 | 49.77 |
Oxygen | 60.36 | 65.33 | 46.42 |
Element | Dwell time | ||
---|---|---|---|
3 ms | 5 ms | 9 ms | |
Aluminum | 30.06 | 18.99 | 3.81 |
Silicon | 9.58 | 15.67 | 49.77 |
Oxygen | 60.36 | 65.33 | 46.42 |