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Table 1 XRR simulation results for the two CDQW samples

From: Effects of shutter transients in molecular beam epitaxy

Simulation results

Layer

CDQW(1)

CDQW(2)

InP buffer 10 nm

10.8

11.1

InGaAs 30 s

2.90

2.73

AlAs 3.7 s

0.41

0.41

InGaAs 30 s

3.18

3.35

InP buffer + sub.

N/A

N/A

  1. Unit of thickness is expressed in nanometers.

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