Table 1 Synthesis conditions for the n-type silicon nanowires
Condition | Value |
---|---|
SiH4 + PH3 flow rate | 6 sccm + 6 sccm |
H2 flow rate | 60 sccm |
Pressure | 1.5 Torr |
Substrate temperature | 400°C |
Radio frequency (13.56 MHz) power density | 500 mW/cm2 |
Condition | Value |
---|---|
SiH4 + PH3 flow rate | 6 sccm + 6 sccm |
H2 flow rate | 60 sccm |
Pressure | 1.5 Torr |
Substrate temperature | 400°C |
Radio frequency (13.56 MHz) power density | 500 mW/cm2 |