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Figure 1 | Nanoscale Research Letters

Figure 1

From: Semiconductor nanomembranes: a platform for new properties via strain engineering

Figure 1

Silicon nanomembrane release and transfer. (a) As-grown Si/SiGe/Si trilayer. The distribution of the lattice constant across the trilayer is shown on the left-hand side; here, the SiGe is compressively strained and therefore tetragonally distorted, whereas the Si is unstrained. (b) The BOX layer is selectively removed with HF, releasing the membrane and allowing elastic relaxation via lateral expansion. As shown on the left-hand side, the released membrane has a less compressively strained SiGe layer sandwiched between two tensilely strained Si layers. An array of holes may be patterned on the unreleased membrane to enhance access of the etchant to the BOX. (c) Wet transfer of a released membrane from the original handling substrate to a new host surface.

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