Figure 8

Calculated total number of states (thick red line) and density of states (thin blue line). For InAs QDs grown on a 25-nm-thick Si(001) NM. The reference energy level is the bottom of the quantum well. (a) For a potential amplitude V₀ = 200 meV with period length of 11 nm, corresponding to 1.47% strain in 25-nm-thick Si. (b) Minigap width as a function of the energy in the middle of the minigap for the structure in (a). From ref[29].