Figure 4From: Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxyThe 90-nm-wide InAs nanofins on nanopatterned Si substrate. SEM (a) and high-resolution TEM (b) images of the 90-nm-wide InAs nanofins on nanopatterned Si substrate with SiO2 as sidewalls.Back to article page