Figure 3
I ds versus V ds plots at different gate voltages ( V g ) for SWCNT-TFT gas sensors. Ids versus Vds plots after (a) 0, (c) 5, (e) 10, and (g) 20 min UV radiation (Vg is varied from −10 to 10 V in 2-V steps). The corresponding Ids-Vg plots of the SWCNT-TFTs after (b) 0, (d) 5, (f) 10, and (h) 20 min of UV radiation (Vds = 0.5 V, Vg = −20 to approximately 20 V).