TY - BOOK AU - Sze, S. M. AU - Ng, K. K. PY - 2007 DA - 2007// TI - Physics of Semiconductor Devices PB - Wiley CY - Hoboken ID - Sze2007 ER - TY - JOUR AU - Sevik, S. AU - Bulutay, C. PY - 2004 DA - 2004// TI - Gunn oscillations in GaN channels JO - Semicond Sci Technol VL - 19 UR - https://doi.org/10.1088/0268-1242/19/4/065 DO - 10.1088/0268-1242/19/4/065 ID - Sevik2004 ER - TY - JOUR AU - Barry, E. A. AU - Sokolov, V. N. AU - Kim, K. W. AU - Trew, R. J. PY - 2010 DA - 2010// TI - Large signal analysis of terahertz generation JO - IEEE Sensors VL - 10 UR - https://doi.org/10.1109/JSEN.2009.2038132 DO - 10.1109/JSEN.2009.2038132 ID - Barry2010 ER - TY - JOUR AU - Yilmazoglu, O. AU - Mutamba, K. AU - Pavlidis, D. AU - Karaduman, T. PY - 2008 DA - 2008// TI - First observation of bias oscillations in GaN diodes on GaN substrates JO - IEEE Trans Electron Devices VL - 55 UR - https://doi.org/10.1109/TED.2008.921253 DO - 10.1109/TED.2008.921253 ID - Yilmazoglu2008 ER - TY - JOUR AU - Korotyeev, V. V. AU - Kochelap, V. A. AU - Kim, K. W. PY - 2011 DA - 2011// TI - Electron transport in bulk GaN under ultrashort high-electric field transient JO - Semicond Sci Technol VL - 26 UR - https://doi.org/10.1088/0268-1242/26/10/105008 DO - 10.1088/0268-1242/26/10/105008 ID - Korotyeev2011 ER - TY - STD TI - Synopsys, Inc: Sentaurus Device User Guide, Version F-2011.09. Mountain View, CA, USA: Synopsys, Inc; ID - ref6 ER - TY - JOUR AU - Carrol, J. E. PY - 1967 DA - 1967// TI - Mechanisms of Gunn effect microwave oscillators JO - Radio Electron Eng VL - 34 UR - https://doi.org/10.1049/ree.1967.0061 DO - 10.1049/ree.1967.0061 ID - Carrol1967 ER - TY - JOUR AU - Kireev, O. A. AU - Levinshtein, M. E. AU - Rumjantsev, S. L. PY - 1984 DA - 1984// TI - Anode domain transient process in supercritical Gunn diodes JO - Sold-St Electron VL - 27 UR - https://doi.org/10.1016/0038-1101(84)90118-7 DO - 10.1016/0038-1101(84)90118-7 ID - Kireev1984 ER - TY - BOOK AU - Shur, M. PY - 1987 DA - 1987// TI - GaAs Devices and Circuits PB - Plenum CY - New York UR - https://doi.org/10.1007/978-1-4899-1989-2 DO - 10.1007/978-1-4899-1989-2 ID - Shur1987 ER - TY - JOUR AU - Auston, D. H. AU - Cheung, K. P. AU - Smith, P. L. PY - 1984 DA - 1984// TI - Picosecond photoconducting Hertzian dipoles JO - Appl Phys Lett VL - 45 UR - https://doi.org/10.1063/1.95174 DO - 10.1063/1.95174 ID - Auston1984 ER - TY - JOUR AU - DeFonzo, A. P. AU - Jarwala, M. AU - Lutz, C. PY - 1987 DA - 1987// TI - Transient response of planar integrated optoelectronic antennas JO - Appl Phys Lett VL - 50 UR - https://doi.org/10.1063/1.97947 DO - 10.1063/1.97947 ID - DeFonzo1987 ER - TY - JOUR AU - Fattinger, C. AU - Grischkowsky, D. PY - 1988 DA - 1988// TI - Point source terahertz optics JO - Appl Phys Lett VL - 53 UR - https://doi.org/10.1063/1.99971 DO - 10.1063/1.99971 ID - Fattinger1988 ER - TY - JOUR AU - Bauhahn, P. E. AU - Haddad, G. I. AU - Masnari, N. A. PY - 1973 DA - 1973// TI - Comparison of the hot electron diffusion rates for GaAs and InP JO - Electron Lett VL - 9 UR - https://doi.org/10.1049/el:19730335 DO - 10.1049/el:19730335 ID - Bauhahn1973 ER - TY - JOUR AU - Turin, V. O. PY - 2005 DA - 2005// TI - A modified transferred-electron high-field mobility model for GaN device simulation JO - Sold-St Electron VL - 49 UR - https://doi.org/10.1016/j.sse.2005.09.002 DO - 10.1016/j.sse.2005.09.002 ID - Turin2005 ER - TY - JOUR AU - Alekseev, E. AU - Pavlidis, D. PY - 2000 DA - 2000// TI - Large-signal microwave performance of GaN-based NDR diode oscillators JO - Sold-St Electron VL - 44 UR - https://doi.org/10.1016/S0038-1101(00)00011-3 DO - 10.1016/S0038-1101(00)00011-3 ID - Alekseev2000 ER - TY - JOUR AU - Anile, A. M. AU - Hern, S. D. PY - 2002 DA - 2002// TI - Two-valley hydrodynamic models for electron transport in gallium arsenide: simulation of Gunn oscillations JO - VLSI Design VL - 15 UR - https://doi.org/10.1080/1065514021000012291 DO - 10.1080/1065514021000012291 ID - Anile2002 ER - TY - JOUR AU - McCumber, D. E. AU - Chynoweth, A. G. PY - 1966 DA - 1966// TI - Theory of negative-conductance amplification and Gunn instabilities in “two-valley” semiconductors JO - IEEE Trans Electron Devices VL - 13 UR - https://doi.org/10.1109/T-ED.1966.15629 DO - 10.1109/T-ED.1966.15629 ID - McCumber1966 ER - TY - JOUR AU - Bosh, R. AU - Thim, H. W. PY - 1974 DA - 1974// TI - Computer simulation of transferred electron devices using the displaced Maxwellian approach JO - IEEE Trans Electron Devices VL - 21 UR - https://doi.org/10.1109/T-ED.1974.17856 DO - 10.1109/T-ED.1974.17856 ID - Bosh1974 ER - TY - JOUR AU - Bucher, P. N. PY - 1967 DA - 1967// TI - The Gunn effect JO - Rep Prog Phys VL - 30 UR - https://doi.org/10.1088/0034-4885/30/1/303 DO - 10.1088/0034-4885/30/1/303 ID - Bucher1967 ER - TY - JOUR AU - Conwell, E. M. AU - Vassel, M. O. PY - 1966 DA - 1966// TI - High-field distribution function in GaAs JO - IEEE Trans Electron Devices VL - 13 UR - https://doi.org/10.1109/T-ED.1966.15630 DO - 10.1109/T-ED.1966.15630 ID - Conwell1966 ER - TY - JOUR AU - Ye, H. AU - Wicks, G. W. AU - Fauchet, P. M. PY - 1999 DA - 1999// TI - Hot electron relaxation in GaN JO - Appl Phys Lett VL - 74 UR - https://doi.org/10.1063/1.122995 DO - 10.1063/1.122995 ID - Ye1999 ER - TY - JOUR AU - Matulionis, A. AU - Katilius, R. AU - Liberis, J. AU - Ardaravicius, L. AU - Eastman, L. F. AU - Shealy, J. R. AU - Smart, J. PY - 2002 DA - 2002// TI - Hot-electron-temperature relaxation time in a two-dimensional electron gas: AlGaN/GaN at 80 K JO - J Appl Phys VL - 92 UR - https://doi.org/10.1063/1.1510166 DO - 10.1063/1.1510166 ID - Matulionis2002 ER - TY - JOUR AU - Bulutay, C. AU - Ridley, B. K. AU - Zakhleniuk, N. A. PY - 2003 DA - 2003// TI - Electron momentum and energy relaxation rates in GaN and AlN in the high-field transport regime JO - Phys Rev B VL - 68 UR - https://doi.org/10.1103/PhysRevB.68.115205 DO - 10.1103/PhysRevB.68.115205 ID - Bulutay2003 ER - TY - JOUR AU - Stratton, R. PY - 1962 DA - 1962// TI - Diffusion of hot and cold electrons in semiconductor barriers JO - Phys Rev VL - 126 UR - https://doi.org/10.1103/PhysRev.126.2002 DO - 10.1103/PhysRev.126.2002 ID - Stratton1962 ER - TY - JOUR AU - Blotekjaer, K. PY - 1966 DA - 1966// TI - Transport equations for electrons in two-valley semiconductors JO - Trans Electron Devices VL - 17 UR - https://doi.org/10.1109/T-ED.1970.16921 DO - 10.1109/T-ED.1970.16921 ID - Blotekjaer1966 ER - TY - JOUR AU - Anisimov, S. I. AU - Rashba, E. I. PY - 1968 DA - 1968// TI - Regarding one model in the theory of Gunn effect JO - JETP Lett VL - 7 ID - Anisimov1968 ER - TY - JOUR AU - Zakhleniuk, N. A. PY - 2006 DA - 2006// TI - Nonequilibrium drift-diffusion transport in semiconductors in presence of strong inhomogeneous electric fields JO - Appl Phys Lett VL - 89 UR - https://doi.org/10.1063/1.2420787 DO - 10.1063/1.2420787 ID - Zakhleniuk2006 ER - TY - JOUR AU - Thim, H. PY - 1971 DA - 1971// TI - Stability and switching in overcritically doped Gunn diodes JO - Proc IEEE VL - 59 UR - https://doi.org/10.1109/PROC.1971.8399 DO - 10.1109/PROC.1971.8399 ID - Thim1971 ER - TY - JOUR AU - D’yakonov, M. I. AU - Furman, A. S. PY - 1982 DA - 1982// TI - Theory of anodic domain in a Gunn diode JO - Sov Phys Semicond VL - 16 ID - D’yakonov1982 ER - TY - JOUR AU - D’yakonov, M. I. AU - Levinshtein, M. E. AU - Simin, G. S. PY - 1981 DA - 1981// TI - Basic properties of an accumulation layer in a Gunn diode JO - Sov Phys Semicond VL - 15 ID - D’yakonov1981 ER - TY - JOUR AU - Kroemer, H. PY - 1966 DA - 1966// TI - Nonlinear space-charge domain dynamics in a semiconductor with negative differential mobility JO - IEEE Trans Electron Devices VL - 13 UR - https://doi.org/10.1109/T-ED.1966.15631 DO - 10.1109/T-ED.1966.15631 ID - Kroemer1966 ER -