Figure 1From: Intersubband absorption properties of high Al content Al x Ga1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor depositionAFM images of the samples with different interlayers. (a) With AlGaN interlayer and (b) with GaN/AlN SL interlayer. The scanned area is 4 × 4 μm2.Back to article page