Figure 3From: Intersubband absorption properties of high Al content Al x Ga1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor depositionWeak-beam dark-field images of samples A and B. (a, b) The same region taken from sample A, using g vectors of (0002) and (11–20). (c, d) The corresponding images taken from sample B.Back to article page