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Table 1 Surface roughness and FWHM of ω -scan for (0002) and (10–12) reflections of samples A and B

From: Intersubband absorption properties of high Al content Al x Ga1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition

Sample RMS surface FWHM
(arc sec)
Roughness MQW GaN template
(nm) <0002> <10-12> <0002> <10-12>
A 1.92 339 593 272.3 267
B 2.55 358 639 237 251
  1. RMS, Root mean square.