Table 1 Elementary component of Cu, In, Ga, and Se in the as-grown CIGS nanopore films
Deposition time(s) | Cu (at.%) | In (at.%) | Ga (at.%) | Se (at.% ) |
---|---|---|---|---|
30 | 44.44 | - | - | 55.56 |
90 | 29.29 | 17.54 | - | 53.17 |
600 | 26.80 | 14.39 | 5.02 | 53.79 |
1,200 | 24.24 | 23.79 | 6.51 | 45.46 |
Deposition time(s) | Cu (at.%) | In (at.%) | Ga (at.%) | Se (at.% ) |
---|---|---|---|---|
30 | 44.44 | - | - | 55.56 |
90 | 29.29 | 17.54 | - | 53.17 |
600 | 26.80 | 14.39 | 5.02 | 53.79 |
1,200 | 24.24 | 23.79 | 6.51 | 45.46 |