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Table 1 Elementary component of Cu, In, Ga, and Se in the as-grown CIGS nanopore films

From: Fabrication and centeracterization of ordered CuIn(1−x)Ga x Se2 nanopore films via template-based electrodeposition

Deposition time(s)

Cu (at.%)

In (at.%)

Ga (at.%)

Se (at.% )

30

44.44

-

-

55.56

90

29.29

17.54

-

53.17

600

26.80

14.39

5.02

53.79

1,200

24.24

23.79

6.51

45.46

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