Investigation of electronic properties of graphene/Si field-effect transistor
© Ma et al.; licensee Springer. 2012
Received: 12 October 2012
Accepted: 1 December 2012
Published: 17 December 2012
We report a high-performance graphene/Si field-effect transistor fabricated via rapid chemical vapor deposition. Oligolayered graphene with a large uniform surface acts as the local gate of the graphene transistors. The scaled transconductance, gm, of the graphene transistors exceeds 3 mS/μm, and the ratio of the current switch, Ion/Ioff, is up to 100. Moreover, the output properties of the graphene transistor show significant current saturation, and the graphene transistor can be modulated using the local graphene gate. These results clearly show that the device is well suited for analog applications.
Graphene is a single-atom-thick carbon film[1, 2] that has a very high carrier mobility (2 × 105 cm2 V−1 s−1), a high saturation velocity, large current density, and thermal conductivity; as a result, it has attracted significant attention for use in high-speed applications and flexible electronics and as a candidate for next-generation technologies that enhance transistor performance beyond dimensional scaling[3, 4]. To date, graphene-based electronics, including graphene field-effect transistors (GFETs)[5, 6], nanoelectromechanical systems, molecular sensors, graphene-based luminescent diodes, and solar cells[10, 11], have been reported. The simplest and most common approach for the fabrication of GFETs is to borrow mature microelectronic technology. This technology requires the deposition of large and uniform graphene thin films on a Si substrate in order to form a back gate. However, it is a challenge to synthesize low-defect and structurally continuous graphene mono- or oligolayers; this represents a major limitation for the rapid adoption of high-quality GFET applications. Graphene can be deposited on Si using the widely studied stripped method, cut-and-choose transfer printing, the epitaxial method[6, 14], chemical vapor deposition (CVD), and other methods[16, 17]. The former two methods are very complex and increase the risk of impurities, which negatively affect transistor performance. Herein, for the rapid preparation of high-quality graphene films and GFETs, we adopt a low-pressure, rapid CVD technology. The surface morphology, structure, carrier concentration, and carrier mobility of the resultant graphene films are systemically studied. In addition, the transport properties of the GFET, such as transconductance, g m , ratio of current switch, Ion/Ioff, and current saturation characteristics, are analyzed. Finally, the carrier transport mechanism in the GFET is discussed.
Results and discussion
High-performance graphene/Si transistors were fabricated by rapid chemical vapor deposition. The electron mobility of the graphene film is 5.1 × 104 cm2 V−1 s−1, the scaled transconductance of the graphene transistors exceeds 3 mS/μm, and the ratio of the current switch, Ion/Ioff, is as high as 100. The fabricated GFET shows current saturation characteristics which demonstrate that two-dimensional graphene devices can be used for analog and radio-frequency circuit applications without the need for bandgap engineering.
XM is a professor and PhD degree holder specializing in semiconductor materials and devices, specially expert in nanoscaled optical-electronic materials and optoelectronic devices. WG is a graduate student major in fabrication of new semiconductor nanometer materials. JS is a lecturer and PhD degree holder specializing in semiconductor devices. YT is an engineer specializing in optoelectronic measurements.
This work was supported in part by the National Natural Science Foundation of China (no. 60976071) and the Scientific Project Program of Suzhou City (no. SYG201121).
- Novoselov KS, Geim AK, Morozov SV, Jiang D, Zhang Y, Dubonos SV, Grigorieva IV, Firsov AA: Electric field effect in atomically thin carbon films. Science 2004, 306: 666. 10.1126/science.1102896View ArticleGoogle Scholar
- Geim AK, Novoselov KS: The rise of graphene. Nat Materials 2007, 6: 183. 10.1038/nmat1849View ArticleGoogle Scholar
- Williams JR, Carlo LD, Marcus CM: Quantum Hall effect in a gate-controlled p-n junction of graphene. Science 2007, 317: 638. 10.1126/science.1144657View ArticleGoogle Scholar
- Novoselov KS, Jiang Z, Morozov SV, Zhang Y, Morozov SV, Stormer HL, Geim AK: Room-temperature quantum Hall effect in graphene. Science 2007, 315: 1379. 10.1126/science.1137201View ArticleGoogle Scholar
- Lin YM, Jenkins KA, Vaides GA, Small JP, Farmer DB, Avouris P: Operation of graphene transistors at gigahertz frequencies. Nano Lett 2009, 9: 426.Google Scholar
- Lin YM, Dimitrakopoulos C, Jenkins KA, Farmer DB, Chiu HY, Grill A, Avouris P: 100 Ghz transistors from wafer-scale epitaxial graphene. Science 2010, 327: 662. 10.1126/science.1184289View ArticleGoogle Scholar
- Lin YM, Vaides GA, Han SJ, Farmer DB, Meric I, Sun Y, Wu YQ, Dimitrakopoulos C, Grill A, Avouris P, Jenkins KA: Wafer-scale graphene integrated circuit. Science 2011, 332: 1294. 10.1126/science.1204428View ArticleGoogle Scholar
- Cohen KT, Qing Q, Li Q, Fang Y, Lieber CM: Graphene and nanowire transistors for cellular interfaces and electrical recording. Nano Lett 2010, 10: 1098. 10.1021/nl1002608View ArticleGoogle Scholar
- Chung K, Lee C, Yi GC: Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices. Science 2010, 330: 655. 10.1126/science.1195403View ArticleGoogle Scholar
- Li X, Zhu H, Wang K, Cao A, Wei J, Li C, Jia Y, Li X, Wu D: Graphene-on-silicon Schottky junction solar cells. Adv Mater 2010, 22: 2743. 10.1002/adma.200904383View ArticleGoogle Scholar
- Jo G, Na S, Oh S, Lee S, Kim TS, Wang G, Choe M, Park W, Yoon J, Kim DY, Kahng YH, Lee T: Tung of a grapheme-electrode work function to enhance the efficiency of organic bulk heterojunction photovoltaic cells with an inverted structure. Appl Phys Lett 2010, 97: 213301. 10.1063/1.3514551View ArticleGoogle Scholar
- Kim SK, Zhao Y, Jang H, Lee SY, Kim JM, Kim KS, Ahn JH, Kim P, Choi JY, Hong BH: Large-scale pattern growth of graphene films for stretchable transparent electrodes. Nature 2009, 457: 706. 10.1038/nature07719View ArticleGoogle Scholar
- Liang XG, Fu ZL, Chou SY: Graphene transistors fabricated via transfer-printing in device active-areas on large wafer. Nano Lett 2007, 7(12):3840–3844. 10.1021/nl072566sView ArticleGoogle Scholar
- Berger C, Song Z, Li X, Wu X, Brown N, Naud C, Mayou D, Li T, Hass J, Marchenkov AN, Conrad EH, First PN, de Heer WA: Electronic confinement and coherence in patterned epitaxial graphene. Science 2006, 312: 1191. 10.1126/science.1125925View ArticleGoogle Scholar
- Dreyer DR, Park S, Bielawskl CW, Ruoff RS: The chemistry of graphene oxide. Chem Soc Rev 2010, 39: 228. 10.1039/b917103gView ArticleGoogle Scholar
- Reina A, Jia XT, Ho J: Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition. Nano Lett 2009, 9: 30. 10.1021/nl801827vView ArticleGoogle Scholar
- Bae S, Kim H, Lee Y, Xu X, Park JS, Zheng Y, Balakrishnan J, Lei T, Kim HR, Song YI, Kim YJ, Kim KS, Ozyilmaz B, Ahn JH, Hong BH, Iijima S: Roll-to-roll production of 30-inch graphene films for transparent electrodes. Nat Nanotech 2010, 5: 574.View ArticleGoogle Scholar
- Yang Z, Gao R, Hu N, Chai J, Cheng Y, Zhang L, Wei H, Kong ESW, Zhang Y: The prospective two-dimensional graphene nanosheets: preparation, functionalization, and applications. Nano-Micro Lett 2011, 4: 1–9.View ArticleGoogle Scholar
- Meric I, Han MY, Young AF, Ozyilmaz B, Kim P, Shepard KL: Current saturation in zero-bandgap, top-gated graphene field-effect transistors. Nat Nanotech 2008, 3: 654. 10.1038/nnano.2008.268View ArticleGoogle Scholar
- Fratini S, Guinea F: Substrate-limited electron dynamics in graphene. Phys Rev B 2008, 77: 195415.View ArticleGoogle Scholar
- Chen JH, Jang C, Xiao S, Ishigami M, Fuhrer MS: Intrinsic and extrinsic performance limits of graphene devices on SiO2. Nat Nanotech 2008, 3: 206. 10.1038/nnano.2008.58View ArticleGoogle Scholar
- Lin YM, Chiu HY, Jenkins KA, Farmer DB, Avouris P, Valdes GA: Dual-gate graphene FETs with fT of 50 GHz. IEEE Electron Device Lett 2010, 31: 68.View ArticleGoogle Scholar
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