Figure 5From: Discrete distribution of implanted and annealed arsenic atoms in silicon nanowires and its effect on device performanceCarrier density profiles and location of active As atoms in NW devices. Equidensity surfaces (blue and green surfaces) and dopant positions (yellow dots) for (a) continuously doped, (b) high-current (red dashed line in Figure 4), (c) medium-current (green dashed line in Figure 4), and (d) low-current (blue dashed line in Figure 4) devices. Vd = Vg = 0.5 V.Back to article page