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Figure 5 | Nanoscale Research Letters

Figure 5

From: Discrete distribution of implanted and annealed arsenic atoms in silicon nanowires and its effect on device performance

Figure 5

Carrier density profiles and location of active As atoms in NW devices. Equidensity surfaces (blue and green surfaces) and dopant positions (yellow dots) for (a) continuously doped, (b) high-current (red dashed line in Figure 4), (c) medium-current (green dashed line in Figure 4), and (d) low-current (blue dashed line in Figure 4) devices. Vd = Vg = 0.5 V.

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