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Table 1 Summary of correlation factors of drain current

From: Discrete distribution of implanted and annealed arsenic atoms in silicon nanowires and its effect on device performance

Factors

Vg = 0.0 V (off-state)

Vg = 0.5 V (on-state)

Vd = 0.05 V

Vd = 0.5 V

Vd = 0.05 V

Vd = 0.5 V

L g *

−0.41

−0.56

−0.12

−0.11

σ

0.00

−0.02

−0.32

−0.06

S s

−0.09

−0.11

−0.14

−0.28

S

0.07

0.05

−0.30

−0.14

N s

0.16

0.25

0.08

−0.08

N

0.13

0.21

0.07

−0.09

  1. Clear correlations are shown in italics.

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