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Table 1 Summary of correlation factors of drain current

From: Discrete distribution of implanted and annealed arsenic atoms in silicon nanowires and its effect on device performance

Factors Vg = 0.0 V (off-state) Vg = 0.5 V (on-state)
Vd = 0.05 V Vd = 0.5 V Vd = 0.05 V Vd = 0.5 V
L g * −0.41 −0.56 −0.12 −0.11
σ 0.00 −0.02 −0.32 −0.06
S s −0.09 −0.11 −0.14 −0.28
S 0.07 0.05 −0.30 −0.14
N s 0.16 0.25 0.08 −0.08
N 0.13 0.21 0.07 −0.09
  1. Clear correlations are shown in italics.