Figure 2From: Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn dopingToF-SIMS profiles of Ga, As, Al, and Ge atom concentration. These are the profiles for the epitaxial GaAs layer grown at high temperature on a Ge substrate with and without the AlAs diffusion barrier. The figure shows that the AlAs barrier layer can restrict the Ge diffusion for GaAs/Ge epitaxy.Back to article page