Figure 5From: Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn dopingFrequency dispersion characteristics of the TiO 2 /Al 2 O 3 /epi-GaAs structure. (a) Zn-doped epi-GaAs with a doping concentration of 1017 cm-3 and (b) Zn-doped epi-GaAs with a doping concentration of 1018 cm-3.Back to article page