Figure 6From: Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn dopingGate leakage current and P-F conduction fitting and F-N tunneling fitting. (a) Gate leakage current of the TiO2/Al2O3/epi-GaAs structure for doped and undoped samples. (b) P-F conduction fitting and F-N tunneling fitting of I-V characteristics for different samples.Back to article page